Presentation Information
[9p-P08-15]Structural Effects of Gamma Radiation on Silicon Semiconductor Detector
〇(B)Nana Kobayashi1, Katsuki Watabe1, Naoki Saito2, Shinnosuke Idogawa1 (1.NIT, Kushiro College, 2.Hokkaido University)
Keywords:
Silicon Semiconductor Detector,Gamma Radiation,p-n junction
In this study, the effect of gamma radiation on the pn junction structure in Si semiconductor detectors was investigated using a safe and low-cost Cobalt-60 radiation source. Detectors with different junction surface geometries were fabricated by mask fabrication and anisotropic etching, and the effect of the different structures on the response was evaluated. A charge amplification circuit was used in the experiments to observe the signals. The results show that it is possible to safely and inexpensively observe structural radiation effects on semiconductor devices.