Presentation Information
[9p-P12-3]Effects of stresses on a band structure of (001)-oriented semi-insulating InP:Fe
〇Yasuhiro Matsuo1, Naoki Nakamura1, Hideo Takeuchi2 (1.Mitsubishi Electric, 2.Osaka Metropolitan Univ.)
Keywords:
semiconductor,Photoreflectance
Compound semiconductor devices are subjected to some stress during the manufacturing process, but the effect of this stress on the band structure and therefore on device characteristics has not been investigated very much. Then, an Fe-doped (001) semi-insulating InP single crystal substrate was thinned, and a stress was applied in one direction by applying weight, and the result was evaluated by photoreflectance (PR) spectroscopy. As a result, a trend similar to the change in Eg due to stress caused by lattice mismatch with the substrate was observed.