Presentation Information

3:40 PM - 4:10 PM JST(6:40 AM - 7:10 AM UTC)

[9p-S102-6]Subband electronics based on few-layer transition metal dichalcogenides

〇Kei Kinoshita¹, Rai Moriya¹, Shota Okazaki², Momoko Onodera¹, Yijin Zhang^1,3, Kenji Watanabe⁴, Takashi Taniguchi⁴, Takao Sasagawa², Tomoki Machida¹ (1.IIS Univ. Tokyo, 2.MSL Science Tokyo, 3.Dep. Phys. Univ. Tokyo, 4.NIMS)

Keywords:

TMD,quantum well,tunneling

Few-layer transition metal dichalcogenides (TMDs) exhibit subbands in both the valence and conduction bands due to quantum confinement in the out-of-plane direction. Therefore, they can be considered as naturally formed quantum wells. In this study, we fabricated a van der Waals double quantum well device using few-layer TMDs and h-BN. Resonant tunneling between subbands occurs in this device, resulting in current peaks with significant negative differential resistance in the current-voltage characteristics. In this presentation, we also report our latest results including triple quantum well devices.

Back to Session information