[14p-K301-1~18] 17.3 Layered materials

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[14p-K301-11] Resonant tunneling in van der Waals triple quantum well based on WSe₂/h-BN junctions

〇Kei Kinoshita¹, Rai Moriya¹, Momoko Onodera¹, Yijin Zhang¹, Kenji Watanabe², Takashi Taniguchi², Takao Sasagawa³, Tomoki Machida¹ (1.IIS Univ. Tokyo, 2.NIMS, 3.MSL Science Tokyo)

Keywords:

TMD,quantum well,tunneling

In this study, a trilayer (3L) WSe₂/h-BN/3L WSe₂/h-BN/3L WSe₂ van der Waals heterostructure device was fabricated and tunneling measurements were performed. Each 3L WSe₂ exhibits quantized subbands due to out-of-plane quantum confinement. Thus, this device can be considered as a triple quantum well. The measured tunneling current curves showed multiple peaks at room temperature. These peaks were well reproduced by simulations based on a series circuit model of negative resistance devices.