[14p-K301-1~18] 17.3 Layered materials

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[14p-K301-15] Electronic properties of bilayer hBN with asymmetric tensile strain

Mina Maruyama¹, Yanlin Gao¹, 〇Susumu Okada¹ (1.Univ. of Tsukuba)

Keywords:

hBN,atomic layer thin films,electronic structures

Using the density functional theory, we investigated the geometric and electronic properties of bilayer hBN comprising the hBN sheets without and with the tensile strain. Our calculations revealed that the structural relaxation is negligible, while they have unique electrostatic properties owing to the local interlayer atomic arrangement.