Presentation Information

[14p-K401-8]Comparison of topology inversion structure of GaN-based topological PhC resonators

〇Hinaki Sugiura1, Takuto Honda1, Mirai Akimoto1, Seiichi Kataoka1, Hayato Kurata1, Akihiko Kikuchi1,2 (1.Sophia Univ., 2.Sophia Semiconductor Reserch Inst.)

Keywords:

Nitride Semiconductor,Gallium nitride,Topological


Comment

To browse or post comments, you must log in.Log in