Presentation Information
[14p-K401-8]Comparison of topology inversion structure of GaN-based topological PhC resonators
〇Hinaki Sugiura1, Takuto Honda1, Mirai Akimoto1, Seiichi Kataoka1, Hayato Kurata1, Akihiko Kikuchi1,2 (1.Sophia Univ., 2.Sophia Semiconductor Reserch Inst.)
Keywords:
Nitride Semiconductor,Gallium nitride,Topological
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