[14p-K507-1~17] CS.5 Code-sharing Session of 6.5 & 7.5

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[14p-K507-4] Thermoelectric performance enhancement brought by selective O vacancy control in epitaxial SnO₂ film/r-Al₂O₃

〇Takafumi Ishibe^1,2, Nobuyasu Naruse³, Yutaka Mera³, Yoshiaki Nakamura^1,2 (1.Grad. School of Eng. Sci., Osaka Univ., 2.OTRI, Osaka Univ., 3.Shiga Univ. Medical Science)

Keywords:

Thermoelectric film,Oxide

SnO₂, which exhibits high electrical conductivity, is attracting much interest as a promising thermoelectric material. However, it is difficult to socially use SnO₂ because of its low Seebeck coefficient and high thermal conductivity. In this study, we pay attention to O^2- anion, which does not compose conduction band and can bring resonant level effect. We are aiming at increasing Seebeck coefficient and reducing thermal conductivity in SnO₂ film by manipulating O^2- anion forming resonant level and enhancing phonon scattering rate.