[15a-P02-1~27] 12.3 Functional Materials and Novel Devices

[15a-P02-17] g-C₃N₄/P3HT thin film heterojunction photo-sensor characteristics

〇Hiroki Yanagisawa¹, Taiki Ito¹, Kosei Ito¹, Kei Noda¹ (1.Keio Univ.)

Keywords:

Photodetector,g-C3N4,Organic semiconductor

In this talk, we report on the properties of thin film heterojunctions of n-type organic semiconductor material, polymeric carbon nitride g-C₃N₄, and p-type organic semiconductor, P3HT, as optical sensors. g-C₃N₄ has attracted attention in the field of optical sensors and solar cells because of its visible light responsivity and atmospheric stability. We have formed a thin-film heterojunction of g-C₃N₄ and P3HT, and used SnO₂ as a buffer layer to evaluate its properties as an optical sensor.