[15a-P03-1~9] 12.4 Organic light-emitting devices and organic transistors

[15a-P03-7] Calculation of Metal-Insulator Phase Transition Dynamics in α-(BEDTTTF)₂I₃ under External Electric Field

Ryo Watanuki¹, Ryota Kobayashi¹, Ryosuke Ando¹, Takuro Watanabe¹, 〇Masatoshi Sakai¹ (1.Chiba Univ.)

Keywords:

charge order,field effect transistor,Hubbard model

To understand the operation of FETs using α-(BEDT-TTF)₂I₃, which shows a metal-insulator transition at 147 K, we performed calculations of the electrical transport properties under an electric field based on the extended Hubbard model. The quarter-filled charge-order phase was taken as the initial state, and the time evolution of the charge density caused by the application of an electric field in the conduction plane was calculated. The orientation and strength dependence of the external electric field were calculated for band fillings around the quarter-filling.