[16a-K502-1~9] 2.1 Radiation physics, Material development and characteristic evaluation

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[16a-K502-7] Consideration of conditioning effect of TlBr semiconductor detectors

〇Kenichi Watanabe¹, Sota Hasegawa¹, Yusuke Sugai¹, Seishiro Tanaka¹, Mitsuhiro Nogami², Keitaro Hitomi² (1.Kyushu Univ., 2.Tohoku Univ.)

Keywords:

TlBr,carrier transport property,conditioning effect

We have studied the conditioning effect of the TlBr semiconductor detectors. It was confirmed that the carrier transport properties of holes in TlBr detectors was improved by applying the bias voltage.