[16p-K309-1~10] 3.12 Semiconductor optical devices

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[16p-K309-7] Characterization of 25-Layer Stacked QD-SOA at 1.55-μm Band

〇(B)Naoya Chiyo^1,2, Atsushi Matsumoto², Shinya Nakajima², Toshimasa Umezawa², Kouichi Akahane², Tomohiro Maeda^1,2, Hideyuki Sotobayashi¹ (1.Aogaku Univ, 2.NICT)

Keywords:

semiconductor optical amplifier,quantum dot,gain characteristics

Beyond 5G requires technology for transmitting millimeter-wave band signals over long distances in RoF systems. However, waveform degradation due to pattern effects in conventional MQW-SOA is an issue. On the other hand, the use of QDs in the active layer has been shown to have the potential to expand the operating bandwidth, but high gain and high power in the 1.55 µm band has not yet been investigated. In this study, we report the results of fabricating a high-density 25-layer stacked QD-SOA, demonstrating its operation in the 1.55 µm band and confirming the improvement of its characteristics.