Presentation Information
[16p-K405-8]Defect Structures and Electronic Properties in Sn/Ge Double Perovskite Solar Cell Using First-Principles Calculation
〇Mai Otake1, Suzune Omori1, Masanori Kaneko2, Giacomo Giorgi3, Koichi Yamashita2, Azusa Muraoka1 (1.Japan Women's Univ., 2.Yokohama City Univ., 3.Perugia Univ.)
Keywords:
Sn/Ge double perovskite solar cells,Defect structure,Lead-free perovskite
Tin-based perovskite solar cells exhibit optical properties comparable to those of lead-based perovskite solar cells, along with the advantage of lower toxicity. However, their low power conversion efficiency remains a significant challenge. The primary causes of this inefficiency are the oxidation of Sn(II) to Sn(IV) and the formation of defect levels due to tin loss. In this study, we use first-principles calculations to analyze the band structure, density of states, chemical potential, and defect formation energy of Sn single perovskites and Sn/Ge double perovskites partially substituted with germanium. Specifically, we aimed to elucidate the defect levels within the bandgap that affect the decrease in conversion efficiency and provide insights for improving energy conversion performance.
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