[16p-P15-1~8] 13.9 Compound solar cells

[16p-P15-3] Design of the anti- reflection coatings for direct wafer-bonded InGaP/GaAs/In_xGa_1-xAs//In_yGa_1-yAs four-junction solar cells

〇Kentaroh Watanabe¹, Takashi Shimasaki², Hassanet Sodabanlu¹, Meita Asami¹, Yoshiaki Nakano², Masakazu Sugiyama^1,2 (1.RCAST, Univ. Tokyo, 2.Eng., Univ. Tokyo)

Keywords:

Multi-Junction solar cells,Anti-Reflection Coatings,Direct wafer bonding

This study aimed to improve the power conversion efficiency of SAB4 junction solar cells by developing a pseudo-three-layer antireflection coating using a dielectric multilayer film. The SAB4 junction solar cell, consisting of an InGaAs single-junction cell epitaxially grown on an InP substrate and an IMM3J stacked using the SAB method, was coated with the developed antireflection coating. As a result, the reflectance in the long-wavelength region was reduced, suggesting the potential for improved solar cell performance.