[17p-K102-1~12] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[17p-K102-5] Quantitative consideration of electron spin relaxation mechanisms in (110) GaAs/AlGaAs quantum wells

〇Yuzo Ohno^1,2, Satoshi Iba² (1.Univ. of Tsukuba, 2.AIST)

Keywords:

semiconductor,spintronics,spin relaxation

Spin relaxation in (110) GaAs/AlGaAs quantum wells, in which the D'yakonov-Perel mechanism is suppressed, is quantitatively examined. Spin relaxation times were calculated considering Elliott–Yafet, inter-subband spin relaxation, and exciton spin relaxation (ExSR) as functions of quantization energy, temperature, and electron density. It is found that the dominant spin relaxation mechanisms are different under different conditions. These findings optimize (110) QW-based spintronic devices and enable accurate estimation under relevant operating conditions.