[17p-K308-1~12] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Highlighted Presentation

[17p-K308-11] Realizing non-volatile resistive switching by controlling valence fluctuation phenomenon

〇Shogo Hatayama¹, Shunsuke Mori², Yuta Saito^1,2, Paul Fons³, Yi Shuang², Yuji Sutou² (1.SFRC, AIST, 2.Tohoku Univ., 3.Keio Univ.)

Keywords:

Nonvolatile memory,Valence fluctuation phenomenon,SmTe