Presentation Information
[17p-K505-2]Analysis of the Functional Mechanism of InGaAs-HEMTs Using Extended Landau Free Energy Framework
〇(B)Daiki Tataka1, Yotaro Machida2, Ryunosuke Nagaoka2, Issei Watanabe3, Masato Kotsugi2, Hirokazu Fukidome1 (1.Tohoku Univ., 2.Tokyo University of Science, 3.NICT)
Keywords:
extended Landau free energy,current amplification,microscopic potential distribution
In order to enhance the functionality of very high-frequency devices for Beyond 5G, there is a need to develop a physics-based method for analyzing the device operation mechanism. We have analyzed the information conversion between microscopic potential distribution and macroscopic current amplification in InGaAs-HEMTs using an extended free energy framework.
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