[10a-A21-1~13] 13.7 Compound and power devices, process technology and characterization

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-A21-1] Fabrication and Characterization of a GaN Photoconductive Switch with Deep n-type Contacts

〇Ryo Masumoto¹, Yusuke Wakamoto¹, Kenji Iso², Ryosho Nakane¹, Takuya Maeda¹ (1.UTokyo, 2.Mitsubishi Chemical Corp.)

Keywords:

PCSS