The 87th JSAP Autumn Meeting 2026
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Session Details

Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[10a-A21-1~13]13.7 Compound and power devices, process technology and characterization

Thu. Sep 10, 2026 9:00 AM - 12:30 PM JST
Thu. Sep 10, 2026 12:00 AM - 3:30 AM UTC
A21 (Faculty of Info. Sci. & Tech. Bldg.)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-A21-1]Fabrication and Characterization of a GaN Photoconductive Switch with Deep n-type Contacts

〇Ryo Masumoto1, Yusuke Wakamoto1, Kenji Iso2, Ryosho Nakane1, Takuya Maeda1 (1.UTokyo, 2.Mitsubishi Chemical Corp.)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[10a-A21-2]TCAD Analysis of the real part of low frequency Y22 in GaN HEMTs with buffer traps

〇Tomohiro Otsuka1, Yoshitaka Niida1, Seiji Fujiwara1, Ken Nakata1 (1.Sumitomo Electric)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-A21-3]Characterization of electron traps near GaN surface induced by SiO2 deposition by PECVD

〇Masanari Takaoka1, Masahiro Hara1, Qiang Chen1, Mikito Nozaki1, Takuma Kobayashi1, Heiji Watanabe1 (1.UOsaka)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[10a-A21-4]Effects of inserting AlN interfacial layer at AlSiO/ m-plane GaN interface

〇Masanobu Takahashi1, Masamichi Akazawa1, Kenji Ito2 (1.RCIQE, Hokkaido Univ., 2.IMaSS, Nagoya Univ.)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-A21-5]Recovery enhancement of threshold voltage shift by sub-Eg light irradiation under high-temperature positive bias stress in AlSiO gate oxide GaN MOSFETs

〇Yuki Ichikawa1, Takumi Hirata1, Masakazu Kanechika2, Tetsu Kachi2, Jun Suda1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[10a-A21-6]Interface states in AlSiO/AlN/p-type GaN MOSFETs evaluated by drain current models

〇Hitoshi Takane1, Tetsuo Narita1, Kenji Ito1,2, Hiroko Iguchi1, Shiro Iwasaki1, Daigo Kikuta1 (1.Toyota Central R&D Labs., Inc., 2.IMaSS, Nagoya Univ.)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[10a-A21-7]Effect of channel effective field on carrier trapping at MOS interface in AlSiO/AlN/p-type GaN MOSFETs

〇Hitoshi Takane1, Tetsuo Narita1, Kenji Ito1,2, Hiroko Iguchi1, Shiro Iwasaki1, Daigo Kikuta1 (1.Toyota Central R&D Labs., Inc., 2.IMaSS, Nagoya Univ.)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[10a-A21-8]Impact of crystalline defects on electrical activity of Mg in N ion implanted GaN

〇Emi Kano1, Kosuke Ishikawa1, Jun Uzuhashi2, Kensuke Sumida1, Tetsuo Narita3, Masahiro Horita1, Zyunya Sahashi1, Lu Shun1, Jun Suda1, Tadakatsu Ohkubo2, Tetsu Kachi1, Nobuyuki Ikarashi1 (1.Nagoya Univ., 2.NIMS, 3.Toyota central R&D)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-A21-9]Investigation of high temperature and atmospheric pressure activation of Mg ion-implanted GaN using OVPE method

〇Sogo Yokoi1, Shigeyoshi Usami1, Masayuki Imanishi1, Tomoaki Sumi2, Junichi Takino2, Yoshio Okayama2, Masafumi Yokoyama3, Masahiko Hata4, Atsushi Tanaka5, Yoshio Honda5, Hiroshi Amano5, Mihoko Maruyama1, Masashi Yoshimura6, Yusuke Mori1 (1.Grad. Sch. of Eng., Osaka Univ., 2.Panasonic Holdings Corp., 3.Sumitomo Chemical Co., Ltd., 4.Itochu Plastics Inc., 5.IMaSS Nagoya Univ., 6.ILE, Osaka Univ.)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-A21-10]Impacts of hole traps in GaOx interlayer on electrical properties of p-type GaN Schottky structures

〇Ryo Sakai1, Masahiro Hara1, Mikito Nozaki1, Takuma Kobayashi1, Heiji Watanabe1 (1.UOsaka)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-A21-11]The Effect of Sequential Nitrogen Ion Implantation on Shallow Electron Trap Density in Low-Concentration Mg-Ion-Implanted and Ultra-High-Pressure Annealed p-GaN Layers

〇Yuto Iwase1, Honoka Itakura1, Masahiro Horita1,2, Tetsu Kachi2, Jun Suda1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMass)
12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[10a-A21-12]Development of a Wide-Contact Technique and Optimization of p-GaN Layer Thickness in IMPATT Diode Structures

〇Tianju Chen1, Xigen Li1, Shin Ito1, Haitao Wang4, Ryoko Tsukamoto2, Jia Wang2,3, Yoshio Honda2,3, Hiroshi Amano2,3 (1.Nagoya Univ.G. S. E., 2.Nagoya Univ.IMaSS, 3.Nagoya Univ.IAR, 4.Nagoya Univ.D-center)
12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-A21-13]Defect Characterization of MBE-Grown p-GaN Using DLTFS

〇Tomoya Fuji1, Karolina Peret2, Mikolaj Chlipala2, Henryk Turski2, Maeda Takuya1 (1.UTokyo, 2.Institute of High Pressure Physics of the Polish Academy of Science (Unipress))
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