[10a-A21-1~13] 13.7 Compound and power devices, process technology and characterization

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-A21-10] Impacts of hole traps in GaO_x interlayer on electrical properties of p-type GaN Schottky structures

〇Ryo Sakai¹, Masahiro Hara¹, Mikito Nozaki¹, Takuma Kobayashi¹, Heiji Watanabe¹ (1.UOsaka)

Keywords:

GaN,Schottky junction,hole trap