[10a-A21-1~13] 13.7 Compound and power devices, process technology and characterization

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[10a-A21-12] Development of a Wide-Contact Technique and Optimization of p-GaN Layer Thickness in IMPATT Diode Structures

〇Tianju Chen¹, Xigen Li¹, Shin Ito¹, Haitao Wang⁴, Ryoko Tsukamoto², Jia Wang^2,3, Yoshio Honda^2,3, Hiroshi Amano^2,3 (1.Nagoya Univ.G. S. E., 2.Nagoya Univ.IMaSS, 3.Nagoya Univ.IAR, 4.Nagoya Univ.D-center)

Keywords:

GaN,IMPATT diode,PEC etching

This presentation focuses on reducing the series resistance of GaN IMPATT diodes for high-power operation. A wide-contact structure formed by PEC lateral selective etching is proposed to enlarge the effective p-type contact area and reduce contact-related resistance. Device simulations using Silvaco ATLAS were performed to analyze the effects of wide-contact width and p-GaN layer thickness on current distribution and series resistance. Based on the simulation results, devices with p-GaN thicknesses of 250, 350, and 450 nm were fabricated and evaluated using forward I–V characteristics and Ron extraction. The results showed that increasing the p-GaN thickness reduced Ron, and the 450 nm sample achieved approximately a 35% reduction compared with the 250 nm sample. These results demonstrate that optimizing the p-GaN thickness is effective for reducing the resistance of wide-contact IMPATT diode structures.