[10a-A21-1~13] 13.7 Compound and power devices, process technology and characterization

12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-A21-13] Defect Characterization of MBE-Grown p-GaN Using DLTFS

〇Tomoya Fuji¹, Karolina Peret², Mikolaj Chlipala², Henryk Turski², Maeda Takuya¹ (1.UTokyo, 2.Institute of High Pressure Physics of the Polish Academy of Science (Unipress))

Keywords:

Gallium Nitride (GaN),Defect,DLTFS

Understanding deep levels that act as sources of carrier trapping and compensation is essential for clarifying and improving the performance of GaN-based optoelectronic devices. Although defects in MOVPE-grown p-GaN have been extensively investigated, detailed reports on MBE-grown samples are still lacking. In this study, we fabricated an MBE-grown p-GaN Schottky barrier diode with a tunnel junction on an n-GaN substrate and evaluated deep defects using Deep Level Transient Fourier Spectroscopy (DLTFS). Three distinct peaks were observed in the temperature range of 300–570 K. These peaks were assigned to H_MBE1 (E_V + 0.60 eV), H_MBE2 (E_V + 0.90 eV), and H_MBE3 (E_V + 1.2 eV), and their possible defect origins were examined.