[10a-A21-1~13] 13.7 Compound and power devices, process technology and characterization

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-A21-3] Characterization of electron traps near GaN surface induced by SiO₂ deposition by PECVD

〇Masanari Takaoka¹, Masahiro Hara¹, Qiang Chen¹, Mikito Nozaki¹, Takuma Kobayashi¹, Heiji Watanabe¹ (1.UOsaka)

Keywords:

GaN,DLTS,SBD