[10a-A21-1~13] 13.7 Compound and power devices, process technology and characterization

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[10a-A21-4] Effects of inserting AlN interfacial layer at AlSiO/ m-plane GaN interface

〇Masanobu Takahashi¹, Masamichi Akazawa¹, Kenji Ito² (1.RCIQE, Hokkaido Univ., 2.IMaSS, Nagoya Univ.)

Keywords:

GaN