Presentation Information

[10a-A21-9]Investigation of high temperature and atmospheric pressure activation of Mg ion-implanted GaN using OVPE method

〇Sogo Yokoi1, Shigeyoshi Usami1, Masayuki Imanishi1, Tomoaki Sumi2, Junichi Takino2, Yoshio Okayama2, Masafumi Yokoyama3, Masahiko Hata4, Atsushi Tanaka5, Yoshio Honda5, Hiroshi Amano5, Mihoko Maruyama1, Masashi Yoshimura6, Yusuke Mori1 (1.Grad. Sch. of Eng., Osaka Univ., 2.Panasonic Holdings Corp., 3.Sumitomo Chemical Co., Ltd., 4.Itochu Plastics Inc., 5.IMaSS Nagoya Univ., 6.ILE, Osaka Univ.)

Keywords:

GaN,activation,OVPE