[10a-A23-1~12] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[10a-A23-1] Self-assembly of InAs quantum dots on metamorphic InAlAs/GaAs (111)A with high Al content

〇Takaaki Mano¹, Akihiro Ohtake¹, Nikita Kulesh¹, Anton Bolyachikin¹, Takuya Kadohira¹, Nobuyuki Ishida¹, Yusuke Hayashi¹, Takashi Kuroda¹ (1.NIMS)

Keywords:

quantum dots,droplet epitaxy,quantum light sources

We are working on the self-assembly of InAs quantum dots on (111)A surfaces by droplet epitaxy, aiming at highly efficient generation of entangled photon pairs in the 1.55um telecom band. In this study, we attempted the self-assembly of InAs quantum dots on metamorphic In_0.76Al_0.24As layers grown on GaAs(111)A substrates, which exhibit a 1.6% lattice mismatch. We report that clear photoluminescence with a peak in the 1.55um band was successfully observed.