[10a-A23-1~12] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[10a-A23-11] Insertion Effects of InGaAs Metamorphic Buffer on 1.3-µm Range Type-II Quantum Wells on GaAs Substrate

〇Ryota Imoto¹, Takeshi Fujisawa², Hidetoshi Suzuki¹, Hirosumi Yokoyama¹, Koji Maeda¹, Masakazu Arai¹ (1.Miyazaki Univ., 2.Hosei Univ.)

Keywords:

semiconductor

We conducted experimental studies based on the hypothesis that combining a metamorphic InGaAs buffer with a Type-II material could overcome the limitation on the number of wells caused by lattice strain, which is a problem on GaAs substrates. We confirmed an increase in photoluminescence (PL) intensity from the quantum wells around 1.3 µm following the introduction of the InGaAs buffer.