[10a-A23-1~12] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

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[10a-A23-12] Effects of exciton splitting energy on thermal quenching of photoluminescence spectrum in GaSb/AlGaSb multiple quantum wells on Si substrate.

〇Seiketsu Ou¹, Osamu Kojima¹, Kouichi Akahane² (1.Chiba Inst. Tech., 2.NICT)

Keywords:

Exciton,GaSb/AlGaSb multiple quantum wells,Thermal quenching

We measured the temperature dependence of photoluminescence spectra in GaSb/AlGaSb multiple quantum wells on a Si substrate, and found that the sample with a 5-nm well width exhibited larger thermal quenching compared to the 8-nm sample. Since the activation energies obtained from the Arrhenius plot are close to the calculated heavy-hole and light-hole exciton splitting energies, it is considered that the ionization of excitons via light-hole states occurs more easily in the 5-nm well.