[10a-A23-1~12] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[10a-A23-2] Band offsets in polarity-controlled GaAs/Ge/GaAs Heterostructures

〇Akihiro Ohtake¹, Takaaki Mano¹, Nobuyuki Ishida¹, Kazutaka Mitsuishi¹, Yusuke Hayashi¹, Yuma Yamagishi², Jun Nakamura² (1.NIMS, 2.UEC-Tokyo)

Keywords:

heterovalent interface,molecular-beam epitaxy,surface and interface structure

We have studied the atomic and electronic structures for polarity-controlled heterostructures of GaAs/Ge/GaAs{111}, using a variety of experimental techniques of XPS, RHEED, LEED, STM/STS, and first-principles calculations.