Presentation Information
[10a-A23-8]Enhanced thermoelectric performance of polycrystalline InAs thin films via solid-phase crystallization of amorphous precursors
〇Yutaka Kiyono1, Koki Nozawa1, Seo Jisol1, Takashi Suemasu1, Kaoru Toko1 (1.Tsukuba Univ.)
Keywords:
semiconductor,crystal growth,thermoelectric properties
This presentation reports the solid-phase crystallization and thermoelectric properties of polycrystalline InAs thin films formed on quartz glass substrates. By varying the In/As ratio and annealing temperature, we found that As-rich conditions promoted the formation of amorphous precursors, leading to enhanced grain growth after annealing. This structural improvement reduced grain-boundary scattering and increased electrical conductivity. Under the optimized condition, a power factor of 310 μW m−1 K−2 was achieved at room temperature, demonstrating that solid-phase crystallization is an effective approach for improving the thermoelectric performance of InAs thin films.