[10a-B31-1~12] 6.1 Ferroelectric thin films

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-B31-11] Memristive properties of (111)/(-111)-oriented Pb(Zr_0.65Ti_0.35)O₃ transferred films using micro-Transfer-Printing

〇Natsuki Takahashi^1,2, Toshiya Murai², Rai Kou², Shinya Kondo¹, Tomoaki Yamada¹ (1.Nagoya Univ., 2.AIST)

Keywords:

ferroelectric,optical memristor,epitaxial thin film

In this study, we evaluated memristive properties of Pb(Zr_0.65Ti_0.35)O₃ (PZT) transferred films using the micro-Transfer-Printing(µ-TP) for application in non-volatile optical devices. In PZT thin films transferred onto ITO/glass substrate using µ-TP method, the memristive property of polarization for transferred PZT thin films were measured. In this measurement, the memristive changes in polarization depended on the amplitude of the voltage pulses and the number of pulses. These results were consistent with those measured before transfer, demonstrating the potential for developing non-volatile optical devices by integrating PZT thin films onto a silicon platform using µ-TP method.