Session Details
[10a-B31-1~12]6.1 Ferroelectric thin films
Thu. Sep 10, 2026 9:00 AM - 12:15 PM JST
Thu. Sep 10, 2026 12:00 AM - 3:15 AM UTC
Thu. Sep 10, 2026 12:00 AM - 3:15 AM UTC
B31 (Faculty of Engineering B Block)
[10a-B31-1][The 60th Young Scientist Presentation Award Speech] 3D Visualization of Electric-Field-Controlled Multiferroic Domain in Co-Substituted BiFeO3 Nanodots
〇Koomok Lee1, Peter Meisenheimer2, Paul Stevenson3, Yasuhito Nagase1, Kei Shigematsu1,4, Ramamoorthy Ramesh5, Masaki Azuma1,4 (1.Science Tokyo, 2.UC Berkeley, 3.Northeastern Univ., 4.KISTEC, 5.Rice Univ)
[10a-B31-2]Single-Domain BiFeO3 Thin Films Grown by Low-Temperature Hydrothermal Epitaxy for Ferroelectric Photovoltaic Applications
〇(P)Kathirvel Aruchamy1,2, Seiji Nakashima2, Ai I Osaka2, Hironori Fujisawa2, Takuro Kubota3, Hiroshi Uchida3, Hiroshi Funakubo4 (1.JSPS Fellow, 2.Univ. of Hyogo, 3.Sophia Univ., 4.Tokyo Inst. of Tech.)
[10a-B31-3]Analysis of piezoelectric response in BiFeO3 epitaxial thin films
〇Kira Fujihara1, Takeshi Yoshimura1,2 (1.Osaka Metro. Univ., 2.Toyohashi Univ. Tech.)
[10a-B31-4]Crystal Structure and Piezoelectric Properties of BiFeO3-BaTiO3 Epitaxial Thin Films on Si
〇Yuji Ashida1, Takeshi Yoshimura1,2 (1.Osaka Metro. Univ., 2.Toyohashi Univ. Tech.)
[10a-B31-5]Domain Wall Engineering: Simulating Nanoscale Electric Field Delivery to Living Cells at Ferroelectric Interfaces
〇ALEXIS BOROWIAK1,2, YOHEI KONO1,2, TAKESHI SHIMI1,2, TAKESHI FUKUMA1,2 (1.Kanazawa Univ., 2.NanoLSI)
[10a-B31-6]Strain-induced domain switching observation of sol-gel derived epitaxial Pb(Zr,Ti)O3 thin films
〇(M2)Ningwei Zhang1, Xiaochuan Sun1, Sang Hyo Kweon1, Isaku Kanno1 (1.Kobe Univ.)
[10a-B31-7]Evaluation of Monocrystalline/Polycrystalline PZT Composite Thin Film Fabricated Using Patterned Polycrystalline LaNiO3 Seed Layer
〇KENTA TSUKAMOTO1, Akihiko Teshigahara1, Shinya Yoshida1 (1.Shibaura Inst. Tec.)
[10a-B31-8]Investigation of Influence of Silicon Elastic Plate Thickness on Curie Temperature of Single-Crystal PZT Thin Film and Its Underlying Mechanism
〇(M2)Shunsaku Nachi1, Shinya Yoshida1, Akihiko Teshigahara1 (1.Shibaura Univ.)
[10a-B31-9]Fabrication and Antiferroelectricity of Epitaxial PbZrO3 Thin Films
〇(M1)Yudai Nakasako1, Jumana P J2, Sang Hyo Kweon1, Isaku Kanno1 (1.Kobe Univ., 2.C-MET Thrissur)
[10a-B31-10]Influence of Thickness on the Stability of the Antiferroelectric Phase in (111)-Epitaxial PbZrO3 Thin Films
〇(M1)Koki Otani1, Shinya Kondo1, Tomoaki Yamada1 (1.Nagoya Univ.)
[10a-B31-11]Memristive properties of (111)/(-111)-oriented Pb(Zr0.65Ti0.35)O3 transferred films using micro-Transfer-Printing
〇Natsuki Takahashi1,2, Toshiya Murai2, Rai Kou2, Shinya Kondo1, Tomoaki Yamada1 (1.Nagoya Univ., 2.AIST)
[10a-B31-12]Time-resolved second harmonic generation for ferroelectric thin films under an electric field
〇(M1)Yuga Kaneko1, Ryohei Terabayashi1, Hideo Tomita1, Shinya Kondo1, Tomoaki Yamada1 (1.Nagoya Univ.)
