Presentation Information

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[10a-E101-10]characterization of ingan gan cavity with direction controlled porous cladding

〇(M1)RYUMA YAMAGUCHI¹, Sotaro Iijima¹, Akihiko Kikuchi^1,2 (1.Sophia Univ, 2.Sophia Semiconductor Inst.)

Keywords:

Gallium Nitride

In this study, we investigated the effect of porous orientation on the lasing characteristics of an InGaN/GaN thin-core laser incorporating a low-refractive-index porous GaN layer formed by electrochemical etching. The porous orientation was controlled by adjusting the n++-GaN exposure conditions, and resonator structures with GaN/air distributed Bragg reflectors (DBRs) were fabricated and evaluated under optical pumping. The results showed that the structure with pores oriented parallel to the cavity exhibited a lower lasing threshold than the structure with pores oriented perpendicular to the cavity.

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