Presentation Information

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[10a-E101-11]Optically Pumped Lasing Characteristics of InGaN/GaN Thin-Film Core Lasers with GaN/Air DBRs Incorporating Bottom Air Gap Layer

〇Sotaro Iijima¹, Ryuma Yamaguchi¹, Akihiko Kikuchi^1,2 (1.Sophia Univ, 2.Sophia Semiconductor Research Inst)

Keywords:

Gallium Nitride

An InGaN/GaN thin-film core laser incorporating a GaN/Air distributed Bragg reflector (DBR) and an air-supported structure was fabricated and characterized under room-temperature optical pumping. Replacing the AlInN low-index layer with an air layer increased the DBR reflectivity from 69% to 96%, resulting in a significant reduction in the lasing threshold, particularly for short cavity lengths. A low threshold power density of 1.30 MW/cm² was achieved for a cavity length of 22 μm, demonstrating the effectiveness of reflectivity enhancement for realizing ultra-low-threshold InGaN lasers.

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