Presentation Information

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-E101-2]Fabrication and Characterization of Electric-Field Driven Phase Shifter Using InGaN Laser Waveguide

〇Hiroki Ogawa¹, Takumi Wada¹, Masahiro Uemukai¹, Ryuji Katayama¹ (1.The Univ. of Osaka)

Keywords:

InGaN laser,Mach-Zehnder interferometer

Optical AI accelerators using multi-stage Mach-Zehnder interferometers (MZIs) are attracting attention as computing devices with lower power consumption and higher speed than electronic circuits. Furthermore, integrating semiconductor lasers and MZIs on the same substrate would enable monolithic integration, leading to even more compact systems. In this study, aiming for the integration of InGaN lasers and MZIs, we fabricated and evaluated an electric-field-induced phase shifter using a waveguide for 405 nm InGaN lasers.

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