Presentation Information

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[10a-E101-3]High power, Wavelength-Tunable, Single-Mode Monolithic Blue Diode Laser Based on Heterogeneous Integration of a GaN/SiON Waveguide

〇Ryosuke Morioka¹, Masanori Okada¹, Takahiro Serikawa¹, Takuya Hashimoto¹, Hisashi Ogawa¹ (1.Nichia Corporation)

Keywords:

gallium nitride,laser diode,photonic integrated circuit

We fabricated an extended-DBR laser employing a heterogeneously integrated GaN/SiON waveguide on a GaN substrate. The device achieved CW operation in the 460nm band, delivering over 100mW output power while maintaining a single longitudinal mode, with wavelength tuning of approximately 0.5nm and stable continuous operation for 100 hours. This approach enables the integration of optical functional devices on the same substrate while preserving the advantages of GaN crystal quality and existing LD fabrication processes, offering a promising route toward enhanced functionality in nitride-based photonic integration.

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