Presentation Information
[10a-E218-6]Improvement of Thin SiO2 Reliability by Flash Lamp Annealing (FLA)
〇Kazuma Kyotani1, Ryoichi Kawai1, Kazuki Goshima1, Shohei Suga1, Shogo Shigemasu2, Hideaki Tanimura2, Katsuhiro Mitsuda2, Shinichi Kato2, Yasuo Nara1, Hiroshi Nohira1, Yuichiro Mitani1 (1.Tokyo City Univ., 2.SCREEN SPE)
Keywords:
Flash Lamp Annealing,FLA,SiO2
In this study, we applied flash lamp annealing (FLA)—a process capable of heating at millisecond intervals under highly non-equilibrium thermal conditions—to thermally oxidized films to determine whether it could achieve a quality surpassing that of the original films. Results from C-V and angle-resolved hard X-ray photoelectron spectroscopy (AR-HAXPES) measurements confirmed that FLA treatment induces structural relaxation even in ISSG-SiO2 thin films, which are considered to be of high quality, and is a process that improves electrical reliability.