[10a-E218-1~11] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-E218-9] Analysis of Gas Flow Velocity and Temperature on Within-Wafer Distribution in Single-Wafer Curing Tools

〇(M2)Haruki Ito¹, Takuma Seki¹, Takezo Mawaki^1,2, Rihito Kuroda^1,2 (1.Tohoku Univ., 2.Tohoku Univ. (NICHe.))

Keywords:

Cure,simulation,polyimide

In this study, simulations of gas flow velocity and gas temperature inside a chamber were performed to investigate possible factors causing within-wafer distribution in a single-wafer curing system. Based on the simulation results, Within-Wafer distributions of gas flow velocity and gas temperature over the silicon substrate were analyzed. Polyimide curing experiments are to be conducted, and the thickness change rate before and after curing is to be compared with the gas velocity and temperature distributions obtained from the simulations. Through this comparison, the factors contributing to within-wafer distribution during polyimide curing is to be examined.