[10a-E301-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-E301-5] Pd/IGZO Synaptic Transistors for Room-Temperature High-Sensitivity H₂ Gas Sensing and Reservoir Operation

〇(D)Atsushi Shimizu¹, Keisuke Ide¹, Katsumi Abe¹, Masato Sasase², Takayoshi Katase¹, Hidenori Hiramatsu¹, Hideo Hosono¹, Toshio Kamiya¹ (1.Science Tokyo, 2.Kogakuin Univ.)

Keywords:

amorphous In-Ga-Zn-O,thin-film transistor,hydrogen gas sensor

In this study, we succeeded in achieving room-temperature H₂ sensing by employing an amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor (TFT) with an ultra-thin Pd layer deposited directly on the channel. This device successfully demonstrated significant hydrogen sensing operation without heating, achieving a sensitivity index exceeding 100. Furthermore, we evaluated its history-dependent dynamic response as synaptic behavior and applied it to a pattern recognition task via physical reservoir computing. Consequently, we successfully achieved a high classification accuracy of approximately 90%.