The 87th JSAP Autumn Meeting 2026
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Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[10a-E301-1~12]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Sep 10, 2026 9:00 AM - 12:15 PM JST
Thu. Sep 10, 2026 12:00 AM - 3:15 AM UTC
E301 (First Year Education Bld. E Block)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-E301-1]Low-Temperature Fabrication of Nb-Doped Anatase TiO2 Thin Films with Low Contact Resistance by Mist Chemical Vapor Deposition

〇Tomoki Kawaguchi1, Megumi Ariga1, Tomohito Sudare2, Yumie Miura2, Ryo Nakayama2, Yoshinobu Nakamura2, Ryota Shimizu3, Htet Su Wai4, Toshiyuki Kawaharamura4, Taro Hitosugi2, Naoomi Yamada1 (1.Chubu Univ., 2.Univ. Tokyo, 3.IMS, 4.Kochi Univ. of Tech.)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-E301-2]Predicting Transport Properties of Nb-Doped Anatase TiO2 Conducting Thin Films

〇(M2)Oga Hayashi1, Tomoki Kawaguchi1, Megumi Ariga1, Tomohito Sudare2, Shintaro Ayame2, Yumie Miura2, Ryo Nakayama2, Yoshinobu Nakamura2, Ryota Shimizu3, Htet Su Wai4, Toshiyuki Kawaharamura4, Taro Hitosugi2, Naoomi Yamada1 (1.Chubu Univ., 2.Univ. Tokyo, 3.Institute for Molecular Science, 4.Kochi Univ. of Tech.)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-E301-3]Solid-phase epitaxy of conductive Nb-doped tin oxide thin films by excimer laser annealing

〇(M2)Yukata Nakano1, Gaku Hirose1, Satoru Kaneko2,1, Matsuda Akifumi1 (1.Science Tokyo, 2.KISTEC)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-E301-4]Synthesis of Transparent Conductive Ta:SrSnO3 Epitaxial Thin Films with Oxygen-Deficient Fluorite Buffer Layer

〇Haruka Shibata1, Daichi Oka1, Yasushi Hirose1 (1.Tokyo Metropolitan Univ.)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-E301-5]Pd/IGZO Synaptic Transistors for Room-Temperature High-Sensitivity H2 Gas Sensing and Reservoir Operation

〇(D)Atsushi Shimizu1, Keisuke Ide1, Katsumi Abe1, Masato Sasase2, Takayoshi Katase1, Hidenori Hiramatsu1, Hideo Hosono1, Toshio Kamiya1 (1.Science Tokyo, 2.Kogakuin Univ.)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-E301-6]Fabrication and Evaluation of Cs-Doped Titanium Dioxide Thin-Film Transistors

〇Ryo Miyazawa1, Tsubasa Takami1, Keita Suzuki1, Masanori Miura1, Fumihiko Hirose1 (1.Yamagata Univ.)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-E301-7]Effective channel thickness indium oxide thin-film transistors

〇(M2)Shoma Akatsuka1, Prashant Ghediya2, Yusaku Magari2, Yasutaka Matsuo2, Hiromichi Ohta2 (1.IST-Hokkaido U., 2.RIES-Hokkaido U.)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-E301-8]Combustion-based High-k HfO2 for High-Performance SixSnyO Thin-film Transistors

〇Shohei Adachi1, Candell Grace P Quino1, Juan Paolo S Bermundo1, Yukiharu Uraoka1, Kosuke Hara1 (1.NAIST)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-E301-9]Growth and electrical properties of crystalline Al doped In2O3 thin films by atomic layer deposition

〇Taiga Nagashima1, Takanori Takahashi1, Hikaru Hoshikawa1, Yukiharu Uraoka1, Kosuke Hara1 (1.NAIST)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[10a-E301-10]Origin of Thermally Activated Negative Threshold Voltage Overshoot in HfOx/AlOx Gated InOx FETs

〇ZIHHAO DAI1, Kazuki Ishiyama2,3, Xuanhedong Gao1, Chia-Tsong Chen2, Toshifumi Irisawa2, Tatsuro Maeda2, Mitsuru Takenaka1, Kasidit Toprasertpong1 (1.The Univ. of Tokyo, 2.AIST, 3.Nihon Univ.)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-E301-11]Temperature-dependent characteristics of polycrystalline Ga-doped In2O3 channel field-effect transistors

〇Hikaru Hoshikawa1, Takanori Takahashi1, Yukiharu Uraoka1 (1.NAIST)
12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-E301-12]Defect evaluation at oxide/oxide interfaces using nanosheet oxide semiconductor MOS capacitors

〇Nao Ogasawara1, Mutsunori Uenuma2, Takanori Takahashi1, Yukiharu Uraoka1 (1.NAIST, 2.AIST)
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