Presentation Information

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-E301-9]Growth and electrical properties of crystalline Al doped In₂O₃ thin films by atomic layer deposition

〇Taiga Nagashima¹, Takanori Takahashi¹, Hikaru Hoshikawa¹, Yukiharu Uraoka¹, Kosuke Hara¹ (1.NAIST)

Keywords:

atomic layer deposition

本研究では，三次元集積デバイス応用に向け，プラズマ支援原子層堆積法により約5 nm厚の多結晶Al添加In2O3（IAO）薄膜を合成し，Al添加量が結晶性およびFET特性に及ぼす影響を評価した．super-cycle法によりIn:Al比を制御し，450 ℃熱処理後のin-plane XRD測定から，AlOx/InOx比の増加に伴う440ピークの高角度シフトおよび格子定数の減少を確認した．

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Presentation Information

[10a-E301-9]Growth and electrical properties of crystalline Al doped In2O3 thin films by atomic layer deposition

Keywords:

[10a-E301-9]Growth and electrical properties of crystalline Al doped In₂O₃ thin films by atomic layer deposition