Presentation Information
[10a-F211-2]Electrical Properties of SiO2/Si(100) Interface Formed by Dry Oxidation near Si Melting Point
〇Koei Matsubara1, Eiji Kamiyama2, Wakana Takeuchi1, Keishirou Goshima1, Noriyuki Taoka1 (1.Aichi Inst. Tech., 2.GlobalWafers Japan Co.,Ltd.)
Keywords:
semiconductor,MOS
