The 87th JSAP Autumn Meeting 2026
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Session Details

Oral presentation13 Semiconductors : 13.3 Insulator technology

[10a-F211-1~8]13.3 Insulator technology

Thu. Sep 10, 2026 9:00 AM - 11:00 AM JST
Thu. Sep 10, 2026 12:00 AM - 2:00 AM UTC
F211 (Frontier Rsch. in Applied Sci. Bld.)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[10a-F211-1]In-situ structural relaxation of Si thermal oxide films during film growth; dependence
on surface orientation and oxidation conditions

〇Eiji Kamiyama1,2, Koji Sueoka2 (1.GlobalWafers Japan Co., Ltd., 2.Okayama Pref. Univ.)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[10a-F211-2]Electrical Properties of SiO2/Si(100) Interface Formed by Dry Oxidation near Si Melting Point

〇Koei Matsubara1, Eiji Kamiyama2, Wakana Takeuchi1, Keishirou Goshima1, Noriyuki Taoka1 (1.Aichi Inst. Tech., 2.GlobalWafers Japan Co.,Ltd.)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[10a-F211-3]Atomic Scale Insights into Excess Si Transport in Cristobalite-like Si Oxide

〇Hiroyuki Kageshima1, Insung Seo1, Toru Akiyama2, Kenji Shiraishi3 (1.Shimane Univ., 2.Mie Univ., 3.Tohoku Univ.)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-F211-4]Analysis of Si Dry Oxidation at Atmospheric Pressure and High Temperature: Verification of the Model of Loops A/B & L-P

〇(M2)Hengyu Wen1, Yasutaka Tsuda2, Yuki Okabe1, Akitaka Yoshigoe2, Yuji Takakuwa3, Shuichi Ogawa1 (1.Nihon Univ., 2.JAEA, 3.Tohoku Univ.)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[10a-F211-5]Reconsideration of stress polarity dependence in SiO2 dielectric breakdown (II)

〇Akira Toriumi1 (1.None)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[10a-F211-6]Low Temperature Oxidation of Si(100)substrate Using Sulfuric Acid

〇Shouhei Onizuka1, Ueno Tomo1, Iwazaki Yoshitaka1 (1.Tokyo Univ of Agri&Tech)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[10a-F211-7]Interface-Driven Self-Organization of Polysilazane-Derived SiO2 Induced by an Atmospheric-Pressure Low-Temperature Plasma Jet and Its Dependence on Si Substrate Orientation

〇Kohei Sakaike1, Seiichiro Higashi2 (1.NIT, Hiroshima college, 2.Hiroshima Univ.)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[10a-F211-8]XPS analysis of effects of interfacial oxide films on LPCVD SiN films

〇(M1C)Seigo Takeda1, Hayato Miyagawa1, Naoshi Takahashi1, Hisatsugu Kurita2, Masataka Nakamura2, Yoshiaki Kamigaki3 (1.Kagawa Univ., 2.ROHM Device Manufacturing, 3.E&B Research Lab.)
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