[10a-F211-1~8] 13.3 Insulator technology

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[10a-F211-3] Atomic Scale Insights into Excess Si Transport in Cristobalite-like Si Oxide

〇Hiroyuki Kageshima¹, Insung Seo¹, Toru Akiyama², Kenji Shiraishi³ (1.Shimane Univ., 2.Mie Univ., 3.Tohoku Univ.)

Keywords:

silicon oxide,excess Si transport,first-principles calculation

In this study, we examined the transport of excess silicon in bulk cristobalite, performed calculations under isotropic strain, and investigated how differences in the topology of the Si-O-Si network affect the behavior. As in previous studies, we assume that the excess silicon exists as interstitial SiO (I_SiO).