Presentation Information
[10a-F211-7]Interface-Driven Self-Organization of Polysilazane-Derived SiO2 Induced by an Atmospheric-Pressure Low-Temperature Plasma Jet and Its Dependence on Si Substrate Orientation
〇Kohei Sakaike1, Seiichiro Higashi2 (1.NIT, Hiroshima college, 2.Hiroshima Univ.)
Keywords:
SiO2,polysilazane,Interface-Driven Self-Organization
To date, we have successfully formed SiO2 thin films with electrical insulating properties close to those of thermally grown oxide formed at 1000 °C at temperatures below 65 °C by irradiating PHPS thin films with a low-temperature plasma jet generated from an Ar and water-vapor gas mixture. We have also proposed an interface-driven self-organization (IDSO) model, in which structural order propagates from Si-O-Si bond-angle information at the PHPS/Si interface. However, whether IDSO universally occurs for different Si substrate orientations remains unclear. In this study, PHPS-derived SiO2 thin films were formed on Si(100), Si(110), and Si(111) substrates, and the dependence of the IDSO process on Si substrate orientation under low-temperature plasma-jet irradiation was investigated.