Presentation Information
[10a-F211-8]XPS analysis of effects of interfacial oxide films on LPCVD SiN films
〇(M1C)Seigo Takeda1, Hayato Miyagawa1, Naoshi Takahashi1, Hisatsugu Kurita2, Masataka Nakamura2, Yoshiaki Kamigaki3 (1.Kagawa Univ., 2.ROHM Device Manufacturing, 3.E&B Research Lab.)
Keywords:
SiN,XPS,dielectric breakdown
LPCVD SiN films are of high application importance as insulating layers, capacitor films, and charge-trapping layers in memory devices within ICs, and elucidating the dielectric breakdown mechanism is required to improve durability. In this study, samples with varying thermal oxide film thicknesses artificially formed at the Si interface prior to LPCVD deposition were fabricated, and compositional analysis of the bonding states near the interface by X-ray photoelectron spectroscopy (XPS) revealed that, in the presence of a thermal oxide film, nitrogen tends to distribute closer to the substrate side, among other findings.