Presentation Information
[10a-F212-4]Improvement of Electrical characteristics in Hydrogen-Terminated Diamond FETs Using Self-Assembled Monolayers
〇Hiroyuki Kamada1, Shun Naruse1 (1.Ookuma Diamond Device Co.,Ltd.)
Keywords:
hydrogen-terminated diamond,self-assembled monolayer,FET
To improve the performance of hydrogen-terminated diamond FETs, we investigated increasing the hole carrier concentration in a diamond substrate using a self-assembled monolayer and improving the electrical characteristics of the FET. The FET was fabricated by forming a self-assembled monolayer on the diamond surface and then forming a gate insulating film on top of it. Electrical characteristics were confirmed to increase the drain current by more than four times compared to conventional (unapplied) designs. Further details will be reported on the day of the presentation.