The 87th JSAP Autumn Meeting 2026
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Session Details

Oral presentation6 Thin Films and Surfaces : 6.2 Carbon-based thin films

[10a-F212-1~6]6.2 Carbon-based thin films

Thu. Sep 10, 2026 9:00 AM - 10:30 AM JST
Thu. Sep 10, 2026 12:00 AM - 1:30 AM UTC
F212 (Frontier Rsch. in Applied Sci. Bld.)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[10a-F212-1]Impact of doping profile on electrical performance of boron-doped diamond MOSFETs

〇Jiangwei LIU1, Tokuyuki Teraji1 (1.NIMS)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[10a-F212-2]Trap-assisted tunneling in Py/Al2O3/p-type diamond MOS structures

〇Makoto Kawano1, Thomas Hamel1, Ian Park1, Yoshitaka Taniyasu1, Kazuyuki Hirama1 (1.NTT BRL)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[10a-F212-3]High-Temperature S-Parameter Characterization of H-Terminated Diamond MOSFETs

〇Hidefumi Suzaki1, Matthieu Florentin1, Haruhiko Koizumi1, Hitoshi Umezawa1 (1.Ookuma Diamond Device)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[10a-F212-4]Improvement of Electrical characteristics in Hydrogen-Terminated Diamond FETs Using Self-Assembled Monolayers

〇Hiroyuki Kamada1, Shun Naruse1 (1.Ookuma Diamond Device Co.,Ltd.)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[10a-F212-5]Evaluation of reverse leakage characteristics in p-type diamond SBD by emission microscopy

〇Kentaro Ema1, Akira Shingu1, Takuya Moriki1, Daisuke Sano1 (1.Honda R&D Co., Ltd.)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[10a-F212-6]Local surface electronic and chemical-state changes at dislocations in diamond substrates by Nano-ESCA

〇Daisuke Sano1, Takuya Moriki1, Kentaro Ema1, Sota Ono2, Hirokazu Fukidome2 (1.Honda R&D Co., Ltd., 2.RIEC, Tohoku University)
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