[10a-N101-1~11] 15.4 III-V-group nitride crystals

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N101-1] Growth-temperature dependence of electrical properties of Si-doped AlN grown by low-temperature sputter epitaxy

〇Takao Kozaka¹, Kohei Ueno¹, Hiroshi Fujioka¹ (1.IIS, Univ. Tokyo)

Keywords:

AlN,sputter,epitaxy