[10a-N101-1~11] 15.4 III-V-group nitride crystals | The 87th JSAP Autumn Meeting 2026

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Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[10a-N101-1~11]15.4 III-V-group nitride crystals

Thu. Sep 10, 2026 9:00 AM - 12:00 PM JST
Thu. Sep 10, 2026 12:00 AM - 3:00 AM UTC

N101 (First Year Education Bld. N Block)

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N101-1]Growth-temperature dependence of electrical properties of Si-doped AlN grown by low-temperature sputter epitaxy

〇Takao Kozaka¹, Kohei Ueno¹, Hiroshi Fujioka¹ (1.IIS, Univ. Tokyo)

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[10a-N101-2]Fabrication and characterization of Al_0.9Ga_0.1N channel HFETs via sputtering

〇Takao Kozaka¹, Kohei Ueno¹, Hiroshi Fujioka¹ (1.IIS, Univ. Tokyo)

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[10a-N101-3]Structural Design of GaN-Based 1~3 µm Infrared Quantum Cascade Lasers

〇Kazuki Nonaka^1,2, Koki Yabe^1,2, Sachie Fujukawa^2,1, Hiroyuki Yaguchi², Hideki Hirayama¹ (1.RIKEN, 2.Saitama Univ.)

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[10a-N101-4]Quantum Structure Design of GaN-Based THz Quantum Cascade Lasers Considering High Lying Levels

〇Koki Yabe^1,2, Kazuki Nonaka^1,2, Takayuki Ishida¹, Sachie Fujikawa^2,1, Hiroyuki Yaguchi², Hideki Hirayama¹ (1.RIKEN, 2.Saitama Univ.)

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N101-5]Fabrication of Thin-Film AlN/GaN HEMTs on FFA Sp-AlN

〇Mikuri Yasui¹, Ryota Akaike^1,2, Hiroki Yasunaga^2,3, Kanako Shojiki^1,2, Hideto Miyake^1,2 (1.Grad. Sch. of Eng. Mie Univ., 2.IC-SDF. Mie Univ., 3.ORIP. Mie Univ.)

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N101-6]Effect of sputtering conditions on N-polar AlN using the sputter-annealing method

〇Tomohiro Tamano¹, Kanako Shojiki^1,2, Ryota Akaike^1,2, Hiroki Yasunaga^2,3, Hideto Miyake^1,2 (1.Grad. Sch. of Eng. Mie Univ, 2.IC-SDF MIe Univ., 3.ORIP Mie Univ.)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[10a-N101-7]In Flux Dependence in Direct Growth of InGaN on ScAlMgO4 Substrates by RF-MBE

〇Daisuke Kato¹, Yoshiaki Nishimura¹, Trang Nakamoto², Md Earul Islam³, Takashi Fuji³, Tsuguo Fukuda⁴, Ryuichi Sugie¹, Tsutomu Araki¹ (1.Ritumeikan Univ., 2.R-GIRO, 3.ROST, 4.Fukuda Crystal Lab.)

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[10a-N101-8]Growth of red-emitting nitride nanocolumns on the entire surface of an AlN/Si(111) substrate via nanotemplate selective-area growth using nanoimprint lithography

〇Yugo Orima¹, Kota Hoshino¹, Rie Togashi¹, Katsumi Kishino¹ (1.Sophia Univ)

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[10a-N101-9]Growth of multiple color integrated nanocolumn crystals by nanotemplate selective-area growth

〇Satoshi Ishikawa¹, Rie Togashi¹, Katsumi Kishino¹ (1.Sophia Univ.)

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[10a-N101-10]Fabrication and Evaluation of Three-Dimensional GaInN Nanostructures for High-Efficiency Red Emission

〇Takuto Katogi¹, Tomohiro Yamaguchi¹, Ryuta Shindo¹, Ishikawa Satoshi², Tohru Honda¹, Takeyoshi Onuma¹, Rie Togashi², Katsumi Kishino² (1.Kogakuin University, 2.Sophia University)

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N101-11]Low-Resistance Tunnel Junctions for Nanowire Lasers Using Highly Si-Doped Sputtered n⁺-GaN Layers

〇Hiroki Teshima¹, Kouki Yamada¹, Takuya Takahashi¹, Haruki Hotta¹, Haruki Sawazak¹, Himari Suzuki¹, Kazumasa Niwa², Koichi Naniwae², Jyunya Iihama³, Yoshiro Kususe³, Masami Mesuda³, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.E&E Evolution Ltd., 3.Tosoh Corporation)

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