Presentation Information
[10a-N101-11]Low-Resistance Tunnel Junctions for Nanowire Lasers Using Highly Si-Doped Sputtered n+-GaN Layers
〇Hiroki Teshima1, Kouki Yamada1, Takuya Takahashi1, Haruki Hotta1, Haruki Sawazak1, Himari Suzuki1, Kazumasa Niwa2, Koichi Naniwae2, Jyunya Iihama3, Yoshiro Kususe3, Masami Mesuda3, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1 (1.Meijo Univ., 2.E&E Evolution Ltd., 3.Tosoh Corporation)
Keywords:
Nanowire Laser,Tunnel Junction,Sputter-grown n+-GaN
To reduce the operating voltage of GaN nanowire lasers, we investigated the formation of n+-GaN tunnel layers by sputter growth, which does not use hydrogen. In our previous study, a reduction in operating voltage was achieved by introducing an n+-GaN layer grown using a Si-doped target with a concentration of 1020 cm-3. However, the carrier concentration of the deposited n+-GaN layer remained at approximately 1019cm-3. Therefore, to further increase the carrier concentration and reduce the tunnel junction resistance, an n+-GaN layer was formed using a Si-doped target with a concentration of 1021 cm-3, and its characteristics were compared with those of the conventional sample.